. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 19 10 -8 10 rS Sp = 10 cm/sec o a; CO 10 rIO. 10 J L J L 0.0 0.2 0.4 0.6 0.8 1.0 WE(A-'m) Figure 2.3 The effectivejiole lifetime tr and its two components, the transit time xt and the average Auger lifetime t,, versus Wc for SP = 1CP cm/sec rt h. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.. Shibib, Muhamm

. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 19 10 -8 10 rS Sp = 10 cm/sec o a; CO 10 rIO. 10 J L J L 0.0 0.2 0.4 0.6 0.8 1.0 WE(A-'m) Figure 2.3 The effectivejiole lifetime tr and its two components, the transit time xt and the average Auger lifetime t,, versus Wc for SP = 1CP cm/sec rt h. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.. Shibib, Muhamm Stock Photo

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. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 19 10 -8 10 rS Sp = 10 cm/sec o a; CO 10 rIO. 10 J L J L 0.0 0.2 0.4 0.6 0.8 1.0 WE(A-'m) Figure 2.3 The effectivejiole lifetime tr and its two components, the transit time xt and the average Auger lifetime t, , versus Wc for SP = 1CP cm/sec rt h. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.. Shibib, Muhammed Ayman.

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